AS/P INTERDIFFUSION IN ULTRATHIN INAS/INP STRAINED QUANTUM-WELLS

被引：18

作者：

SALLESE, JM

TAYLOR, S

BUHLMANN, HJ

CARLIN, JF

RUDRA, A

HOUDRE, R

ILEGEMS, M

机构：

[1] Institut de Micro-et Optoélectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.112365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intermixing process of ultrathin InAs/InP strained quantum well structures by thermal annealing at 730-830-degrees-C is investigated by photoluminescence measurements. Analyzing the results using a microscopic model, the interdiffusion process is characterized by an activation energy close to 3.8+/-2.0 eV, leading to an interdiffusion coefficient close to 7+/-0.5x10(-7) cm2/s at 830-degrees-C.

引用

页码：341 / 343

页数：3

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