COMPUTER SIMULATION OF LSA OSCILLATORS WITH HIGH DOPING TO FREQUENCY RATIOS

被引：5

作者：

JEPPESEN, P

JEPPSSON, B

机构：

[1] Cornell Universitv, Ithaca

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 05期

关键词：

D O I：

10.1109/PROC.1969.7074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Computer simulations of twice oversized n-GaAs diodes with random doping fluctuations operated in a transmission line (multiresonant) circuit are presented. LSA operation in this multiresonant circuit which provides an RF square wave voltage across the diode, has been obtained for n/f ratios as high as 1106 s/cm3. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

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页码：795 / +

页数：1

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