SIMPLE MODEL FOR ELECTRON-HOLE GENERATION AND SWITCHING MECHANISMS IN NTYPE-GAAS DIODES

被引：7

作者：

CHRISTENSSON, S

LUNDSTROM, I

MARKLUND, I

JEPPSSON, B

机构：

来源：

ELECTRONICS LETTERS | 1967年 / 3卷 / 11期

关键词：

D O I：

10.1049/el:19670400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：507 / +

页数：1

共 14 条

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BUTCHER, PN ;

FAWCETT, W .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11) :1425-&

[2] ELECTRON-HOLE GENERATION IN GAAS [J].

CONWELL, EM .

APPLIED PHYSICS LETTERS, 1966, 9 (10) :383-+

[3] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES [J].

COPELAND, JA .

APPLIED PHYSICS LETTERS, 1966, 9 (04) :140-+

[4]

GIBSON AF, 1960, PROGRESS SEMICONDUCT, V4, P63

[5] AVALANCHE INJECTION IN SEMICONDUCTORS [J].

GUNN, JB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (08) :781-790

[6] SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES [J].

HEEKS, JS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :68-+

[7] VOLTAGE TUNING OF CONCENTRIC PLANAR GUNN DIODES [J].

JEPPSSON, B ;

MARKLUND, I ;

OLSSON, K .

ELECTRONICS LETTERS, 1967, 3 (11) :498-&

[8] FAILURE MECHANISMS IN GUNN DIODES [J].

JEPPSSON, B ;

MARKLUND, I .

ELECTRONICS LETTERS, 1967, 3 (05) :213-+

[9] INFRARED AND MICROWAVE RADIATIONS ASSOCIATED WITH A CURRENT-CONTROLLED INSTABILITY IN GAAS [J].

LIU, SG .

APPLIED PHYSICS LETTERS, 1966, 9 (02) :79-+

[10]

STEFLE MC, 1962, J PHYS SOC JPN, V17, P1729

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