SI INDIFFUSION ON GE(100)-(2X1) STUDIED BY CORE-LEVEL PHOTOEMISSION

被引：36

作者：

LIN, DS ^{[1
]}

MILLER, T ^{[1
]}

CHIANG, TC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.45.11415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Core-level photoemission spectroscopy has been utilized to study the adsorption and growth of Si on Ge(100)-(2 x 1) by molecular-beam epitaxy. The populations of Si and Ge atoms in the surface layer are monitored by measuring the intensities of the surface-shifted Si and Ge core-level components. After several atomic layers of Si are deposited on Ge(100) at a growth temperature of 450-degrees-C, the top layer which forms the (2 x 1) reconstruction consists of Ge atoms only. This tendency for Si atoms to move below the surface persists even for growth at about room temperature.

引用

页码：11415 / 11418

页数：4

共 14 条

[1] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE [J].

ASAI, M ;

UEBA, H ;

TATSUYAMA, C .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2577-2583

[2] CORE-LEVEL PHOTOEMISSION-STUDIES OF SURFACES, INTERFACES, AND OVERLAYERS [J].

CHIANG, TC .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (03) :269-317

[3] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J].

GOSSMANN, HJ ;

FELDMAN, LC ;

GIBSON, WM .

SURFACE SCIENCE, 1985, 155 (2-3) :413-431

[4] DIFFUSION OF SI INTO GE STUDIED BY CORE LEVEL PHOTOEMISSION [J].

HOEVEN, AJ ;

AARTS, J ;

LARSEN, PK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (01) :5-8

[5] GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING [J].

IYER, SS ;

TSANG, JC ;

COPEL, MW ;

PUKITE, PR ;

TROMP, RM .

APPLIED PHYSICS LETTERS, 1989, 54 (03) :219-221

[6] DIRECT IMAGING OF INTERFACIAL ORDERING IN ULTRATHIN (SIMGEN)P SUPERLATTICES [J].

JESSON, DE ;

PENNYCOOK, SJ ;

BARIBEAU, JM .

PHYSICAL REVIEW LETTERS, 1991, 66 (06) :750-753

[7] STRUCTURAL-PROPERTIES OF HETEROEPITAXIAL GE FILMS ON A SI(100)-2X1 SURFACE [J].

KATAOKA, Y ;

UEBA, H ;

TATSUYAMA, C .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :749-759

[8] EQUILIBRIUM ALLOY PROPERTIES BY DIRECT SIMULATION - OSCILLATORY SEGREGATION AT THE SI-GE(100) 2X1 SURFACE [J].

KELIRES, PC ;

TERSOFF, J .

PHYSICAL REVIEW LETTERS, 1989, 63 (11) :1164-1167

[9]

Lin D.Y., UNPUB

[10] DIMER CHARGE ASYMMETRY DETERMINED BY PHOTOEMISSION FROM EPITAXIAL GE ON SI(100)-(2X1) [J].

LIN, DS ;

MILLER, T ;

CHIANG, TC .

PHYSICAL REVIEW LETTERS, 1991, 67 (16) :2187-2190

← 1 2 →