SIH3 RADICAL DENSITY IN PULSED SILANE PLASMA

被引：41

作者：

ITABASHI, N

NISHIWAKI, N

MAGANE, M

GOTO, T

MATSUDA, A

YAMADA, C

HIROTA, E

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 03期

关键词：

Amorphous silicon thin film; Infrared diode laser absorption spectroscopy (IRLAS); Plasma CVD; SiH[!sub]3[!/sub] radical density; Silane plasma;

D O I：

10.1143/JJAP.29.585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The SiH3 radical density in pulsed silane discharge plasma was measured by infrared diode laser absorption spectroscopy (IRLAS) for three buffer gases and also as functions of the sample pressure and the pulse width. They were compared with the SiH and SiH2 radical densities. The growth rate of a-Si:H thin film was compared with the SiH3 radical density on various plasma conditions. These data were employed to discuss the contribution of SiH3 to a-Si:H thin-film growth. © 1990 The Japan Society of Applied Physics.

引用

页码：585 / 590

页数：6

共 24 条

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