ZINC-DOPING OF INP DURING CHEMICAL BEAM EPITAXY USING DIETHYLZINC

被引：21

作者：

TSANG, WT

CHOA, FS

HA, NT

机构：

[1] AT and T Bell Laboratories Murray Hill, NJ

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 07期

关键词：

P-TYPE INP; CHEMICAL BEAM EPITAXY; ZN-DOPED INP;

D O I：

10.1007/BF02666015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diethylzinc was used as a p-type dopant source during InP growth by chemical beam epitaxy. In InP, electrically activated Zn saturated at a concentration of approximately 2.0 x 10(18) cm-3 for epilayers grown at 540-degrees-C. Higher role concentrations were obtained by lowering the growth temperature. However, measurements with SIMS indicated that very serious Zn diffusion occurred when the Zn concentration appeared to reduce the pyrolysis efficiency of trimethylindium. This caused a reduction in the InP growth rate and InAs mole fraction in InGaAs epilayers. No Zn "memory effect" was detected in our system. Undoped InP epilayers maintained an n-type background of approximately 5 x 10(15) cm-3.

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页码：541 / 544

页数：4

相关论文

共 15 条

[1] BE DOPING OF LIQUID-PHASE-EPITAXIAL INP [J].

ABRAMS, EB ;

SUMSKI, S ;

BONNER, WA ;

COLEMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4469-4470

[2]

HAMM RT, COMMUNICATION

[3] DOPING STUDIES FOR INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

HSU, CC ;

YUAN, JS ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :535-542

[4] METALLIC P-TYPE GAAS AND INGAAS GROWN BY MOMBE [J].

KONAGAI, M ;

YAMADA, T ;

AKATSUKA, T ;

NOZAKI, S ;

MIYAKE, R ;

SAITO, K ;

FUKAMACHI, T ;

TOKUMITSU, E ;

TAKAHASHI, K .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :359-365

[5] A STUDY OF ZINC DOPING IN METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION OF INP [J].

NELSON, AW ;

WESTBROOK, LD .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3103-3108

[6] GROWTH AND CHARACTERIZATION OF INP USING METALORGANIC CHEMICAL VAPOR-DEPOSITION AT REDUCED PRESSURE [J].

RAZEGHI, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :76-82

[7] OMVPE GROWTH OF INGAASP MATERIALS FOR LONG WAVELENGTH DETECTORS AND EMITTERS [J].

SAXENA, R ;

SARDI, V ;

OBERSTAR, J ;

HODGE, L ;

KEEVER, M ;

TROTT, G ;

CHEN, KL ;

MOON, R .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :591-597

[8] THE ROLE OF IMPURITIES IN III/V SEMICONDUCTORS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (01) :91-100

[9] IRON-DOPED SEMI-INSULATING INP GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

SUDBO, AS ;

YANG, L ;

CAMARDA, R ;

LEIBENGUTH, RE .

APPLIED PHYSICS LETTERS, 1989, 54 (23) :2336-2338

[10] DOPING STUDIES USING THERMAL BEAMS IN CHEMICAL-BEAM EPITAXY [J].

TSANG, WT ;

TELL, B ;

DITZENBERGER, JA ;

DAYEM, AH .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4182-4185