PHOSPHORUS ION-IMPLANTATION INDUCED INTERMIXING OF INGAAS-INP QUANTUM WELL STRUCTURES

被引：40

作者：

TELL, B

SHAH, J

THOMAS, PM

BROWNGOEBELER, KF

DIGIOVANNI, A

MILLER, BI

KOREN, U

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1570 / 1572

页数：3

共 16 条

[1] SELF-ELECTRO-OPTIC EFFECT DEVICE AND MODULATION CONVERTER WITH INGAAS/INP MULTIPLE QUANTUM WELLS [J].

BARJOSEPH, I ;

SUCHA, G ;

MILLER, DAB ;

CHEMLA, DS ;

MILLER, BI ;

KOREN, U .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :51-53

[2] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J].

CIBERT, J ;

PETROFF, PM ;

WERDER, DJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :223-225

[3] ELECTRON-MICROSCOPE STUDY OF ANNEALED SIH2+ IMPLANTED INP [J].

COMER, JJ ;

DAVIES, DE ;

LORENZO, JP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1827-1832

[4] MECHANISM FOR ION-INDUCED MIXING OF GAAS-ALGAAS INTERFACES BY RAPID THERMAL ANNEALING [J].

KAHEN, KB ;

RAJESWARAN, G ;

LEE, ST .

APPLIED PHYSICS LETTERS, 1988, 53 (17) :1635-1637

[5] ALUMINUM ION-IMPLANTATION ENHANCED INTERMIXING OF GAAS-ALGAAS QUANTUM-WELL STRUCTURES [J].

KASH, K ;

TELL, B ;

GRABBE, P ;

DOBISZ, EA ;

CRAIGHEAD, HG ;

TAMARGO, MC .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) :190-194

[6] DAMAGE AND REORDERING OF ION-IMPLANTED LAYERS OF INP [J].

KENNEDY, EF .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :375-377

[7] HIGH-POWER OPERATION IN INGAAS SEPARATE CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER-DIODES [J].

KITAMURA, M ;

TAKANO, S ;

SASAKI, T ;

YAMADA, H ;

MITO, I .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :1-3

[8] LOW INTERNAL LOSS SEPARATE CONFINEMENT HETEROSTRUCTURE INGAAS INGAASP QUANTUM-WELL LASER [J].

KOREN, U ;

MILLER, BI ;

SU, YK ;

KOCH, TL ;

BOWERS, JE .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1744-1746

[9] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

MILLER, BI ;

SCHUBERT, EF ;

KOREN, U ;

OURMAZD, A ;

DAYEM, AH ;

CAPIK, RJ .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1384-1386

[10] INTERMIXING PROCESS OF INGAAS INP MQW GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY AT THERMAL ANNEALING [J].

NAKASHIMA, K ;

KAWAGUCHI, Y ;

KAWAMURA, Y ;

ASAHI, H ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10) :L1620-L1622

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