HIGH MICROWAVE AND ULTRA-LOW NOISE PERFORMANCE OF FULLY ION-IMPLANTED GAAS-MESFETS WITH AU/WSIN T-SHAPED GATE

被引:17
作者
ONODERA, K
NISHIMURA, K
ASAI, K
SUGITANI, S
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, ELECTR TECHNOL, ATSUGI, KANAGAWA 24301, JAPAN
关键词
D O I
10.1109/16.249418
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fully ion-implanted n+ self-aligned GaAs MESFET's with high microwave and ultra-low noise performance have been successfully fabricated. T-shaped gate structures composed of Au/WSiN are employed to reduce gate resistance effectively. Very-thin and high-quality channel with high carrier concentration can be formed by adopting the optimum annealing temperature for the channel, and the channel surface suffers almost no damage by using ECR plasma RIE for gate formation. GaAs MESFET's with a gate length as short as 0.35 mum demonstrated a maximum oscillation frequency of 76 GHz. At an operating frequency of 18 GHz, a minimum noise figure of 0.81 dB with an associated gain of 7.7 dB is obtained. A K(f) factor of 1.4 estimated by Fukui's noise figure equation, which is comparable to those of AlGaAs/GaAs HEMT's with the same geometry, reveals that the quality of the channel is evaluated to be very high.
引用
收藏
页码:18 / 24
页数:7
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