ELECTRONIC STATE STUDIES OF THE CLEAN SI(111)7X7 AND THE HYDROGEN CHEMISORBED SI(111) SURFACE BY TOTAL CURRENT SPECTROSCOPY

被引：4

作者：

DAI, DX

WANG, XD

HU, JH

GE, YQ

机构：

[1] Surface Physics Laboratory, Fudan University, Shanghai

来源：

SURFACE SCIENCE | 1992年 / 274卷 / 02期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0039-6028(92)90528-E

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Experimental results have been obtained on the clean Si(111)7 x 7 surface and the hydrogen chemisorbed Si(111) surface by using total current spectroscopy (TCS). Four occupied surface states at 0.5, -0.2, -0.9 (or -1.45) and -5.5 eV relative to the valence band maximum (VBM) are observed on the Si(111)7 x 7 surface. An induced surface state at -5.7 eV below the VBM has also been observed on the hydrogen saturated chemisorbed surface.

引用

收藏

页码：252 / 256

页数：5

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