INFLUENCE OF HYDROGEN ON THE ELECTRICAL AND OPTICAL-ACTIVITY OF MISFIT DISLOCATIONS IN SI/SIGE EPILAYERS

Photoluminescence spectroscopy and electron-beam-induced current (EBIC) technique have been used to characterize misfit dislocations in Si/SiGe epilayers following hydrogen plasma treatment (T=200-500°C). Low temperature EBIC measurements showed that the majority (90%) of shallow levels associated with misfit dislocations were not passivated, whereas deeper midgap levels are readily passivated. The dislocation (D bands) related luminescence features were all reduced in intensity following hydrogen treatment; at T=300°C the D1 was preferentially passivated and could no longer be observed, whereas the other D bands although reduced in intensity could still be observed. Depassivation experiments showed that following posthydrogenation annealing at 600°C the deep levels passivated as measured by EBIC and the D bands are regenerated. © 1994 American Institute of Physics.