APPLICATION OF FOCUSED ION-BEAM TECHNOLOGY TO MASKLESS ION-IMPLANTATION IN A MOLECULAR-BEAM EPITAXY GROWN GAAS OR ALGAAS EPITAXIAL LAYER FOR 3-DIMENSIONAL PATTERN DOPING CRYSTAL-GROWTH

被引：13

作者：

MIYAUCHI, E

HASHIMOTO, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573759

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：933 / 938

页数：6

共 31 条

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[17] MIYAUCHI E, 1985, 29TH INT S EL ION PH
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[19] VERTICAL NPN TRANSISTORS BY MASKLESS BORON IMPLANTATION
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