A NOVEL GE NANOSTRUCTURE EXHIBITING VISIBLE PHOTOLUMINESCENCE

被引:2
作者
JIANG, JG
CHEN, KJ
HUANG, XF
FENG, D
SUN, DY
机构
[1] NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210008,PEOPLES R CHINA
[2] NANJING UNIV,DEPT PHYS,NANJING 210008,PEOPLES R CHINA
来源
CHINESE PHYSICS LETTERS | 1993年 / 10卷 / 10期
关键词
D O I
10.1088/0256-307X/10/10/016
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The a-Ge:H/a-SiN(x):H multiquantum-well structures were prepared by a computer-controlled plasma enhanced chemical vapor deposition method and then crystallized by Ar+ laser annealing technique. When the Ge well-layer thickness was reduced to 30 angstrom, the crystallized sample showed a room temperature photoluminescence with a peak at about 2.26 eV. Meanwhile some significant characteristics of such a novel Ge nanostructure were also revealed by x-ray diffraction. Possible mechanisms of this visible PL phenomenon have been discussed.
引用
收藏
页码:630 / 633
页数:4
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