HYDRIDE SOURCES FOR DIFFUSION OF DOPANTS INTO SILICON-ON-SAPPHIRE FILMS

[1] BHOLA SR, 1963, RCA REV, V24, P511

[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[3] DAUTZENBERG WG, 1967, MAY ECS M DALL

[4] DUFFY MC, 1967, ELECTROCHEM TECHNOL, V5, P29

[5] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1909 - &

[6] CARRIER TRANSPORT IN THIN SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2759 - &

[7] MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (08) : 1107 - &

[8] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 353 - +

[9] AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 469 - +

[10] A1 REDISTRIBUTION IN THERMALLY OXIDIZED SI SURFACE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (03) : 460 - &

[1] BHOLA SR, 1963, RCA REV, V24, P511

[2] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[3] DAUTZENBERG WG, 1967, MAY ECS M DALL

[4] DUFFY MC, 1967, ELECTROCHEM TECHNOL, V5, P29

[5] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1909 - &

[6] CARRIER TRANSPORT IN THIN SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2759 - &

[7] MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (08) : 1107 - &

[8] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 353 - +

[9] AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 469 - +

[10] A1 REDISTRIBUTION IN THERMALLY OXIDIZED SI SURFACE [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (03) : 460 - &