MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTICS IN N-TYPE GALLIUM ARSENIDE

被引：6

作者：

INOUE, M

SHIRAFUJI, J

INUISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 10期

关键词：

D O I：

10.1143/JJAP.10.1378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1378 / +

页数：1

共 28 条

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[6]

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APPLIED PHYSICS LETTERS, 1966, 9 (08) :283-+

[8] A MICROWAVE EVALUATION OF VELOCITY-FIELD CHARACTERISTIC IN DIFFERENT REGIONS OF INDIVIDUAL EPITAXIAL GALLIUM - ARSENIDE LAYERS [J].

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[9] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

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