MICRO-RAMAN FOR DIAMOND FILM STRESS-ANALYSIS

被引：78

作者：

CHEN, KH ^{[1
]}

LAI, YL ^{[1
]}

LIN, JC ^{[1
]}

SONG, KJ ^{[1
]}

CHEN, LC ^{[1
]}

HUANG, CY ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,CTR CONDENSED MATTER SCI,TAIPEI,TAIWAN

来源：

关键词：

DIAMOND; RAMAN SPECTROSCOPY; STRESS;

D O I：

10.1016/0925-9635(94)05319-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The residual stress in microwave plasma-enhanced CVD diamond film was analyzed using a Raman spectrometer with micrometer spatial resolution. This enables effective study of isolated crystals grown in the same deposition run. A variation of the Raman line shape near 1332 cm(-1) was observed from different crystals in the same sample. A phenomenological model was used to describe the shift and splitting of the diamond Raman line, from which the type and the magnitude of the stress in PECVD grown diamond can be assessed. The interrelationship and the origin of the stress in the film is discussed.

引用

页码：460 / 463

页数：4

共 11 条

[1] DIAMOND DEPOSITION TECHNOLOGIES [J].

BACHMANN, PK ;

VANENCKEVORT, W .

[2]

BUTLER JE, 1994, 1994 P WORKSH PROC A, P133

[3] A LATTICE THEORY OF MORPHIC EFFECTS IN CRYSTALS OF DIAMOND STRUCTURE [J].

GANESAN, S ;

MARADUDI.AA ;

OITMAA, J .

ANNALS OF PHYSICS, 1970, 56 (02) :556-&

[4] EFFECT OF UNIAXIAL STRESS ON ZONE-CENTER OPTICAL PHONON OF DIAMOND [J].

GRIMSDITCH, MH ;

ANASTASSAKIS, E ;

CARDONA, M .

PHYSICAL REVIEW B, 1978, 18 (02) :901-904

[5] CHEMICAL-VAPOR-DEPOSITION OF DIAMOND [J].

KLAGES, CP .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (06) :513-526

[6] RAMAN SPECTRUM OF DIAMOND [J].

SOLIN, SA ;

RAMDAS, AK .

PHYSICAL REVIEW B, 1970, 1 (04) :1687-&

[7] VARIATION OF THE RAMAN DIAMOND LINE-SHAPE WITH CRYSTALLOGRAPHIC ORIENTATION OF ISOLATED CHEMICAL-VAPOR-DEPOSITED DIAMOND CRYSTALS [J].

STUART, SA ;

PRAWER, S ;

WEISER, PS .

[8]

WANG WL, 1992, THIN SOLID FILMS, V215, P174, DOI 10.1016/0040-6090(92)90433-C

[9] INTRINSIC STRESS IN DIAMOND FILMS PREPARED BY MICROWAVE PLASMA CVD [J].

WINDISCHMANN, H ;

EPPS, GF ;

CONG, Y ;

COLLINS, RW .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2231-2237

[10] TEXTURED GROWTH OF DIAMOND ON SILICON VIA INSITU CARBURIZATION AND BIAS-ENHANCED NUCLEATION [J].

WOLTER, SD ;

STONER, BR ;

GLASS, JT ;

ELLIS, PJ ;

BUHAENKO, DS ;

JENKINS, CE ;

SOUTHWORTH, P .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1215-1217

← 1 2 →