STUDIES ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF REACTIVE ELECTRON-BEAM EVAPORATED INDIUM TIN OXIDE-FILMS

被引：34

作者：

MANIVANNAN, P

SUBRAHMANYAM, A

机构：

[1] Indian Inst of Technology, Madras

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 09期

关键词：

D O I：

10.1088/0022-3727/26/9/027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly conducting (rho = 2.5 x 10(-4) OMEGA cm) and transparent (92%) tin-doped indium oxide (ITO) films have been prepared by a reactive electron beam evaporation technique; the dependence of these properties on the substrate temperature (150-275-degrees-C) and tin doping (0-15% by weight) has been studied. Hall mobility in the films has been found to increase with substrate temperature and decrease with the addition of tin. An attempt has been made to distinguish the different scattering mechanisms responsible for electrical conduction; it is found that the grain boundary scattering is negligbly small in these films. An analysis of the optical data has been made to evaluate the broadening parameter and the Burstein-Moss shift in optical band gaps.

引用

页码：1510 / 1515

页数：6

共 20 条

[11] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159

[12] TEMPERATURE-DEPENDENCE OF TRANSPORT-PROPERTIES OF EVAPORATED INDIUM TIN OXIDE-FILMS [J].

HUANG, KF ;

UEN, TM ;

GOU, YS ;

HUANG, CR ;

YANG, HC .

THIN SOLID FILMS, 1987, 148 (01) :7-15

[13] QUANTUM-TRANSPORT THEORIES AND MULTIPLE SCATTERING IN DOPED SEMICONDUCTORS .2. MOBILITY OF N-TYPE GALLIUM ARSENIDE [J].

MOORE, EJ .

PHYSICAL REVIEW, 1967, 160 (03) :618-&

[14] OPTICAL DISPERSION IN ELECTRON-BEAM-EVAPORATED INDIUM TIN OXIDE THIN-FILMS [J].

OESTERLEIN, R ;

KROKOSZINSKI, HJ .

THIN SOLID FILMS, 1989, 175 :241-247

[15] ELECTRICAL AND OPTICAL-PROPERTIES OF UNDOPED AND ANTIMONY-DOPED TIN OXIDE-FILMS [J].

SHANTHI, E ;

DUTTA, V ;

BANERJEE, A ;

CHOPRA, KL .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6243-6251

[16] PHOTOVOLTAIC PROPERTIES OF SPRAYED IN2O3-INP JUNCTIONS [J].

SUBRAHMANYAM, A ;

VASU, V ;

RAGHAVAN, PS ;

KUMAR, J ;

RAMASAMY, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 14 (04) :365-368

[17] REACTION-KINETICS OF THE FORMATION OF INDIUM TIN OXIDE-FILMS GROWN BY SPRAY PYROLYSIS [J].

VASU, V ;

SUBRAHMANYAM, A .

THIN SOLID FILMS, 1990, 193 (1-2) :696-703

[18] ELECTRICAL AND OPTICAL-PROPERTIES OF PYROLYTICALLY SPRAYED SNO2 FILMS DEPENDENCE ON SUBSTRATE-TEMPERATURE AND SUBSTRATE NOZZLE DISTANCE [J].

VASU, V ;

SUBRAHMANYAM, A .

THIN SOLID FILMS, 1990, 189 (02) :217-225

[19] SCATTERING OF CHARGE-CARRIERS IN REACTIVELY SPUTTERED CDIN2O4 THIN-FILMS [J].

ZAKRZEWSKA, K ;

PISARKIEWICZ, T ;

CZAPLA, A .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 99 (01) :141-149

[20]

ZIMAN JM, 1967, ELECTRONS PHONONS, P285

← 1 2 →