HIGH-FIELD TRANSPORT IN A-SIH

被引:11
作者
NEBEL, CE [1 ]
STREET, RA [1 ]
机构
[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 1993年 / 7卷 / 05期
关键词
D O I
10.1142/S0217979293002304
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electric field dependent DC-dark and transient photoconductivity data measured over a broad temperature (10 K less-than-or-equal-to T less-than-or-equal-to 300 K) and field regime (10(2) V/cm less-than-or-equal-to F less-than-or-equal-to 6 x 10(5) V/cm) in phosphorus and boron doped and intrinsic amorphous hydrogenated silicon (a-Si:H) are described. The data demonstrate the strong influence of the electric field on carrier propagation. Enhancements over 6 orders of magnitude in conductivity (sigma) are achieved for fields greater than 10(5) V/cm, which changes a-Si:H films from highly insulating to very conductive at low temperatures. The field dependence is described empirically by a power law sigma is similar to F(y) with y in the range 10 less-than-or-equal-to y less-than-or-equal-to 17. The enhancement and y depend on doping level with significant differences between electron and hole currents. These results are confirmed by transient photoconductivity experiments on intrinsic a-Si:H from which the carrier mobility (mu(D)) and the mutau-product are deduced. The drift mobility is enhanced by many orders of magnitude up to values Of mu(D) > 10(-2) cm2/Vs and is identified as parameter which dominates high field transport. The increase in mobility is comparable to the increase in conductivity and shows a time- and thickness dependence indicative of dispersive transport. The data is interpreted introducing a field-enhanced nearest neighbor hopping model which is governed by ballistic capture and field induced re-emission.
引用
收藏
页码:1207 / 1258
页数:52
相关论文
共 60 条
[1]   NATURE OF ELECTRONIC STATES OF DISORDERED SYSTEM .1. LOCALIZED STATES [J].
ABRAM, RA ;
EDWARDS, SF .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11) :1183-+
[2]   NONLINEAR PHOTOCARRIER DRIFT IN HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS [J].
ANTONIADIS, H ;
SCHIFF, EA .
PHYSICAL REVIEW B, 1991, 43 (17) :13957-13966
[3]  
BEYER W, 1984, SEMICONDUCTORS SEM C, V21, P258
[4]   TEMPERATURE AND ELECTRIC-FIELD DEPENDENCE OF THE PICOSECOND ELECTRON-DRIFT VELOCITY IN A-SI-H [J].
DEVLEN, RI ;
TAUC, J ;
SCHIFF, EA .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :567-569
[5]   LOW-TEMPERATURE ELECTRONIC TRANSPORT IN NON-CRYSTALLINE SEMICONDUCTORS [J].
FRITZSCHE, H .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :1-6
[6]   THEORETICAL-STUDIES OF THE LOW-TEMPERATURE DRIFT MOBILITY IN A-SI-H [J].
HEUCKEROTH, V ;
OVERHOF, H ;
SCHUMACHER, R ;
THOMAS, P .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01) :193-200
[7]  
IMAO S, 1991, JPN J APPL PHYS PT 2, P1227
[8]   FIELD-DEPENDENT RECOMBINATION IN A-SI-H [J].
JAHN, K ;
FUHS, W ;
PIERZ, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :307-309
[9]   STUDY OF A-SI-H DRIFT MOBILITY IN SUBNANOSECOND TIME SCALE [J].
JUSKA, G ;
JUKONIS, G ;
KOCKA, J .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 (Pt1) :354-356
[10]   PROPERTIES OF FREE-CARRIER TRANSPORT IN A-SE AND A-SI-H [J].
JUSKA, G .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :401-406