SUPERCONDUCTING TRANSITION-TEMPERATURES OF THIN V3SI LAYERS FORMED BY THE INTERACTION OF V FILMS WITH THINLY OXIDIZED SI WAFERS

被引：14

作者：

OYA, GI

INABE, H

ONODERA, Y

SAWADA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1115 / 1121

页数：7

共 17 条

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