EFFECT OF CHLORINE ON NEGATIVE BIAS INSTABILITY IN MOS STRUCTURES

[11] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[12] KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466

[13] INVESTIGATION OF SILICON-SILICON DIOXIDE INTERFACE USING MOS STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) : 180 - &

[14] SURFACE STATE GENERATION IN MOS STRUCTURE BY APPLYING HIGH-FIELD TO SIO2 FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) : 1610 - 1617

[15] DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 809 - 815

[16] PROPERTIES OF SIO2 GROWN IN PRESENCE OF HCL OR C-12 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (02) : 284 - 290

[17] WORK FUNCTION DIFFERENCE OF MOS-SYSTEM WITH ALUMINUM FIELD PLATES AND POLYCRYSTALLINE SILICON FIELD PLATES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 769 - 775

[11] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[12] KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466

[13] INVESTIGATION OF SILICON-SILICON DIOXIDE INTERFACE USING MOS STRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (02) : 180 - &

[14] SURFACE STATE GENERATION IN MOS STRUCTURE BY APPLYING HIGH-FIELD TO SIO2 FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) : 1610 - 1617

[15] DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : 809 - 815

[16] PROPERTIES OF SIO2 GROWN IN PRESENCE OF HCL OR C-12 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (02) : 284 - 290

[17] WORK FUNCTION DIFFERENCE OF MOS-SYSTEM WITH ALUMINUM FIELD PLATES AND POLYCRYSTALLINE SILICON FIELD PLATES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (08) : 769 - 775