NEW RESONANT TUNNELING SUPERLATTICE AVALANCHE PHOTODIODE DEVICE STRUCTURE FOR LONG-WAVELENGTH INFRARED DETECTION

被引:7
作者
SUMMERS, CJ [1 ]
BRENNAN, KF [1 ]
机构
[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
关键词
D O I
10.1063/1.98992
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:276 / 278
页数:3
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共 22 条
[1]   SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES [J].
BLAUVELT, H ;
MARGALIT, S ;
YARIV, A .
ELECTRONICS LETTERS, 1982, 18 (09) :375-376
[2]   HGCDTE HETEROJUNCTIONS [J].
BRATT, PR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1687-1691
[3]   THEORY OF THE GAINAS/ALINAS-DOPED QUANTUM-WELL APD - A NEW LOW-NOISE SOLID-STATE PHOTODETECTOR FOR LIGHTWAVE COMMUNICATION-SYSTEMS [J].
BRENNAN, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1683-1695
[5]   THEORY OF RESONANT TUNNELING IN A VARIABLY SPACED MULTIQUANTUM WELL STRUCTURE - AN AIRY FUNCTION-APPROACH [J].
BRENNAN, KF ;
SUMMERS, CJ .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :614-623
[6]  
BROUDY RM, 1981, SEMICONDUCT SEMIMET, V18, P157
[7]   HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].
CAMPBELL, JC ;
DENTAI, AG ;
HOLDEN, WS ;
KASPER, BL .
ELECTRONICS LETTERS, 1983, 19 (20) :818-820
[8]  
CAPASSO F, 1985, SEMICONDUCT SEMIMET, V22, P1
[9]   IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].
CHIN, R ;
HOLONYAK, N ;
STILLMAN, GE ;
TANG, JY ;
HESS, K .
ELECTRONICS LETTERS, 1980, 16 (12) :467-469
[10]   MOLECULAR-BEAM EPITAXY OF ALLOYS AND SUPERLATTICES INVOLVING MERCURY [J].
FAURIE, JP ;
BOUKERCHE, M ;
RENO, J ;
SIVANANTHAN, S ;
HSU, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :55-59