BAND-STRUCTURE EFFECTS IN ALSB-INAS-ALSB DOUBLE-BARRIER STRUCTURES

被引：9

作者：

CHIANG, JC

机构：

[1] Department of Physics, National Sun Yat-sen University, Kaohsiung

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the study of the resonant-tunneling characteristics of the AlSb-InAs-AlSb double-barrier structures within a second-neighbor sp3 bond-orbital model. The model employs one s-like antibonding orbital and 3 p-like bonding orbitals per unit site and is capable of describing the lowest conduction band accurately throughout the entire Brillouin zone. The current-voltage curve thus obtained, compared to those obtained using the nearest-neighbor sp3 bond-orbital model or those obtained from the two-band model, gives a much better agreement with the experiment.

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页码：1956 / 1958

页数：3

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