STUDY OF ECR HYDROGEN PLASMA TREATMENT ON POLY-SI THIN-FILM TRANSISTORS

被引：14

作者：

TAKESHITA, T

UNAGAMI, T

KOGURE, O

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2118 / L2120

页数：3

共 13 条

[1] ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS [J].

CAMPBELL, DR .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :604-606

[2] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J].

FOSSUM, JG ;

ORTIZCONDE, A ;

SHICHIJO, H ;

BANERJEE, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1878-1884

[3] POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS [J].

HAWKINS, WG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :477-481

[4] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[5] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].

MALHI, SDS ;

SHICHIJO, H ;

BANERJEE, SK ;

SUNDARESAN, R ;

ELAHY, M ;

POLLACK, GP ;

RICHARDSON, WF ;

SHAH, AH ;

HITE, LR ;

WOMACK, RH ;

CHATTERJEE, PK ;

LAM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :258-281

[6] EFFECTS OF GRAIN-BOUNDARY PASSIVATION ON THE CHARACTERISTICS OF PARA-CHANNEL MOSFETS IN LPCVD POLYSILICON [J].

MALHI, SDS ;

SHAH, RR ;

SHICHIJO, H ;

PINIZZOTTO, RF ;

CHEN, CE ;

CHATTERJEE, PK ;

LAM, HW .

ELECTRONICS LETTERS, 1983, 19 (23) :993-994

[7] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].

MATSUO, S ;

KIUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212

[8]

MOROZUKI S, 1986, 6TH P INT DISPL RES, P196

[9]

ONO T, 1984, JPN J APPL PHYS, V23, pL543

[10] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J].

POLLACK, GP ;

RICHARDSON, WF ;

MALHI, SDS ;

BONIFIELD, T ;

SHICHIJO, H ;

BANERJEE, S ;

ELAHY, M ;

SHAH, AH ;

WOMACK, R ;

CHATTERJEE, PK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :468-470

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