GENERATION MECHANISM OF DISLOCATIONS IN LOCAL OXIDATION OF SILICON

被引：31

作者：

SHIBATA, K

TANIGUCHI, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 06期

关键词：

D O I：

10.1149/1.2129903

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1383 / 1387

页数：5

共 12 条

[1] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J].

BASSOUS, E ;

YU, HN ;

MANISCALCO, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1729-1737

[2]

BOGN A, 1978, APPL PHYS LETT, V33, P895

[3] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J].

CELLI, V ;

THOMSON, R ;

KABLER, M ;

NINOMIYA, T .

PHYSICAL REVIEW, 1963, 131 (01) :58-&

[4] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J].

EERNISSE, EP ;

DERBENWICK, GF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1534-1539

[5]

EERNISSE EP, 1977, APPL PHYS LETT, V30, P296

[6] RESIDUAL-STRESS IN SILICON-NITRIDE FILMS [J].

IRENE, EA .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) :287-298

[7]

KOBLER MN, 1963, PHYS REV, V131, P54

[8] FRAMED RECESSED OXIDE SCHEME FOR DISLOCATION-FREE PLANAR SI STRUCTURES [J].

MAGDO, I ;

BOHG, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :932-936

[9] SOME ASPECTS OF OXIDE ISOLATION TECHNOLOGY [J].

PAREKH, PC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1703-1707

[10] X-RAY-DIFFRACTION TOPOGRAPHS OF SILICON CRYSTALS WITH SUPERPOSED OXIDE FILM .2. PENDELLOSUNG FRINGES - COMPARISON OF EXPERIMENT WITH THEORY [J].

PATEL, JR ;

KATO, N .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :971-977

← 1 2 →