CHARACTERIZATION OF THE IMPLANTATION DAMAGE IN SIO2 WITH X-RAY PHOTOELECTRON-SPECTROSCOPY

[1] CHANGES IN THE OPTICAL REFLECTIVITY OF IMPLANTED SILICON AS A FUNCTION OF IMPLANTATION ENERGY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 892 - 894

[2] Bayly A. R., 1973, Radiation Effects, V18, P111, DOI 10.1080/00337577308234725

[3] STRUCTURE OF VITREOUS-SILICA - VALIDITY OF RANDOM NETWORK THEORY [J]. PHILOSOPHICAL MAGAZINE, 1972, 25 (06): : 1381 - &

[4] RADIATION-DAMAGE ENHANCEMENT OF THE PENETRATION OF WATER INTO SILICA GLASS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2312 - 2315

[5] RADIATION-DAMAGE IN ION-IMPLANTED QUARTZ CRYSTALS .2. ANNEALING BEHAVIOR [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 493 - 498

[6] GEVASIMENKO NN, 1980, PHYS STATUS SOLIDI A, V62, pK169

[7] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[8] AN XPS STUDY OF THE INFLUENCE OF ION SPUTTERING ON BONDING IN THERMALLY GROWN SILICON DIOXIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 43 - 47

[9] CHEMICAL BOND AND RELATED PROPERTIES OF SIO2 .1. CHARACTER OF CHEMICAL BOND [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01): : 133 - 140

[10] RADIATION DEFECTS AND OPTICAL-PROPERTIES OF ION-IMPLANTED SILICON DIOXIDE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 31 - 34

[1] CHANGES IN THE OPTICAL REFLECTIVITY OF IMPLANTED SILICON AS A FUNCTION OF IMPLANTATION ENERGY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 892 - 894

[2] Bayly A. R., 1973, Radiation Effects, V18, P111, DOI 10.1080/00337577308234725

[3] STRUCTURE OF VITREOUS-SILICA - VALIDITY OF RANDOM NETWORK THEORY [J]. PHILOSOPHICAL MAGAZINE, 1972, 25 (06): : 1381 - &

[4] RADIATION-DAMAGE ENHANCEMENT OF THE PENETRATION OF WATER INTO SILICA GLASS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2312 - 2315

[5] RADIATION-DAMAGE IN ION-IMPLANTED QUARTZ CRYSTALS .2. ANNEALING BEHAVIOR [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 493 - 498

[6] GEVASIMENKO NN, 1980, PHYS STATUS SOLIDI A, V62, pK169

[7] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[8] AN XPS STUDY OF THE INFLUENCE OF ION SPUTTERING ON BONDING IN THERMALLY GROWN SILICON DIOXIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 43 - 47

[9] CHEMICAL BOND AND RELATED PROPERTIES OF SIO2 .1. CHARACTER OF CHEMICAL BOND [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01): : 133 - 140

[10] RADIATION DEFECTS AND OPTICAL-PROPERTIES OF ION-IMPLANTED SILICON DIOXIDE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 31 - 34