GRAIN-BOUNDARY BARRIER HEIGHT IN POLYCRYSTALLINE DIAMOND FILMS PRODUCED BY DC PLASMA DEPOSITION OF CO2 AND HYDROGEN

被引:7
作者
CHATTOPADHYAY, KK
MITRA, P
CHAUDHURI, S
PAL, AK
机构
[1] Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta
关键词
D O I
10.1016/0167-577X(94)90014-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline diamond films were produced on mica by dc plasma deposition of CO2 (3-5 vol%) and hydrogen mixture. Optical properties of the films were studied in the wavelength range 300-800 nm. The barrier height and the density of trap states in the polycrystalline films were determined from the transmittance measurements by using a modified form of the Dow-Redfield model.
引用
收藏
页码:313 / 317
页数:5
相关论文
共 18 条
[1]   ALTERNATIVE ROUTE FOR STUDYING THE GRAIN-BOUNDARY SCATTERING IN SEMICONDUCTOR-FILMS OF HIGH-RESISTIVITY [J].
BHATTACHARYYA, D ;
CHAUDHURI, S ;
PAL, AK .
VACUUM, 1993, 44 (08) :797-801
[2]   ABSORPTION-EDGE OF CDS THIN-FILMS [J].
BUJATTI, M ;
MARCELJA, F .
THIN SOLID FILMS, 1972, 11 (02) :249-&
[3]   PREPARATION OF DIAMOND FILMS BY AXIAL MAGNETRON SPUTTERING OF VITREOUS CARBON TARGET [J].
CHATTOPADHYAY, KK ;
DUTTA, J ;
CHAUDHURI, S ;
PAL, AK .
MATERIALS LETTERS, 1993, 16 (2-3) :145-149
[4]   TEMPERATURE AND CONCENTRATION DISTRIBUTION OF H2 AND H-ATOMS IN HOT-FILAMENT CHEMICAL-VAPOR DEPOSITION OF DIAMOND [J].
CHEN, KH ;
CHUANG, MC ;
PENNEY, CM ;
BANHOLZER, WF .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) :1485-1493
[5]   FABRICATION AND CHARACTERIZATION OF DIAMOND MOTH EYE ANTIREFLECTIVE SURFACES ON GE [J].
DENATALE, JF ;
HOOD, PJ ;
FLINTOFF, JF ;
HARKER, AB .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) :1388-1393
[6]   TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J].
DOW, JD ;
REDFIELD, D .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :594-+
[7]   ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE [J].
DOW, JD ;
REDFIELD, D .
PHYSICAL REVIEW B, 1970, 1 (08) :3358-&
[8]   DIAMOND GROWTH IN A NOVEL LOW-PRESSURE FLAME [J].
GLUMAC, NG ;
GOODWIN, DG .
APPLIED PHYSICS LETTERS, 1992, 60 (21) :2695-2696
[9]   DIAMOND DEPOSITION ON SILICON SURFACES HEATED TO TEMPERATURE AS LOW AS 135-DEGREES-C [J].
IHARA, M ;
MAENO, H ;
MIYAMOTO, K ;
KOMIYAMA, H .
APPLIED PHYSICS LETTERS, 1991, 59 (12) :1473-1475
[10]   LOW-TEMPERATURE DIAMOND DEPOSITION BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
LIOU, Y ;
INSPEKTOR, A ;
WEIMER, R ;
MESSIER, R .
APPLIED PHYSICS LETTERS, 1989, 55 (07) :631-633