MONOLITHICALLY INTEGRATED INGAAS/INP MSM-FET PHOTORECEIVER PREPARED BY CHEMICAL BEAM EPITAXY

被引：8

作者：

YANG, L

SUDBO, AS

TSANG, WT

GARBINSKI, PA

CAMARDA, RM

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

Semiconducting Indium Phosphide;

D O I：

10.1016/0022-0248(90)90355-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate the first monolithic integration of a metal-semiconductor-metal (MSM) InGaAs photodetector with an FET and resistors into a high-impedance front-end photoreceiver circuit. The sample was grown in a single step by chemical beam epitaxy, and standard processing steps for making FETs were used to fabricate the receiver circuit. Semi-insulating Fe-doped InP layers were used as the insulating gate of the FET, the barrier enhancement layer in the MSM photodetector, and the electrical isolation layer between the photodetector and the electronic circuit. A bit error rate of less than 10-9 at 200 Mbit/s has been achieved with this preliminary circuit for an optical power of -17 dBm. © 1990.

引用

页码：162 / 167

页数：6

共 8 条

[1] A GAAS-MESFET IC FOR OPTICAL MULTIPROCESSOR NETWORKS [J].