GATE CURRENT 1/F NOISE IN GAAS-MESFETS

被引:22
作者
VANDAMME, LKJ
RIGAUD, D
PERANSIN, JM
ALABEDRA, R
DUMAS, JM
机构
[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,CNRS,UA 391,F-34060 MONTPELLIER,FRANCE
[2] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE
关键词
SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER - Mathematical Models - TRANSISTORS; FIELD EFFECT - Junctions;
D O I
10.1109/16.3366
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a difference on type of I//g versus V//d//s and V//g//s and even greater differences in the gate current noise. The 1/f part in the spectrum of the gate current is a better diagnostic tool for characterizing the quality of the junction than the drain current noise. A model that is based on a Schottky barrier shunted by edge currents are proposed to explain the experimental results.
引用
收藏
页码:1071 / 1075
页数:5
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