NEARLY IDEAL ENHANCED BARRIER HEIGHT SCHOTTKY CONTACTS TO N-INP FOR MESFET APPLICATIONS

被引：14

作者：

ILIADIS, AA

机构：

来源：

关键词：

D O I：

10.1049/el:19890390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：572 / 574

页数：3

共 7 条

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[4] INTERFACIAL CONSTRAINTS ON DEVICE PERFORMANCE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 496 - 503
[5] Rhoderick E. H., 1978, METAL SEMICONDUCTOR, P46
[6] INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHT
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ROBSON, PN
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (05) : 381 - 387
[7] THERMAL-OXIDATION OF INP
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