PREPARATION OF TURBOSTRATIC AND CUBIC BORON-NITRIDE FILMS BY ELECTRON-CYCLOTRON-RESONANCE, PLASMA-ASSISTED, CHEMICAL-VAPOR-DEPOSITION

被引：10

作者：

GOTO, T

TANAKA, T

MASUMOTO, H

HIRAI, T

机构：

[1] Institute for Materials Research, Tohoku University, Sendai, 980-77

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1994年 / 5卷 / 06期

关键词：

D O I：

10.1007/BF00215567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Boron-nitride films were prepared on single-crystal silicon substrates by electron-cyclotron-resonance (ECR) plasma-assisted, chemical vapour deposition (CVD), using B2H6 and nitrogen as the source gases, without intentional heating of the substrate. Turbostratic boron-nitride (t- BN) films were obtained at a maximum deposition rate of 1.8 nms(-1). A cubic boron nitride (c-BN) phase formed in the t-BN films after application of a radio-frequency (r.f.) bias to the substrates at a voltage of 156-172 V and at a maximum deposition rate of 0.08 nms(-1).

引用

收藏

页码：324 / 328

页数：5

相关论文

共 27 条

[1] CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS [J].

ADAMS, AC ;

CAPIO, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :399-405

[2] PREPARATION, PROPERTIES AND APPLICATIONS OF BORON-NITRIDE THIN-FILMS [J].

ARYA, SPS ;

DAMICO, A .

THIN SOLID FILMS, 1988, 157 (02) :267-282

[3] THE INTERACTION OF LOW-ENERGY ION-BEAMS WITH SURFACES [J].

CARTER, G ;

ARMOUR, DG .

THIN SOLID FILMS, 1981, 80 (1-3) :13-30

[4] FUNCTION OF SUBSTRATE BIAS POTENTIAL FOR FORMATION OF CUBIC BORON-NITRIDE FILMS IN PLASMA CVD TECHNIQUE [J].

CHAYAHARA, A ;

YOKOYAMA, H ;

IMURA, T ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (09) :L1435-L1436

[5] LATTICE INFRARED SPECTRA OF BORON NITRIDE AND BORON MONOPHOSPHIDE [J].

GIELISSE, PJ ;

MITRA, SS ;

PLENDL, JN ;

GRIFFIS, RD ;

MANSUR, LC ;

MARSHALL, R ;

PASCOE, EA .

PHYSICAL REVIEW, 1967, 155 (03) :1039-&

[6] PREPARATION OF SUPERCONDUCTING YBA2CU3O7-X FILMS BY ECR PLASMA SPUTTERING [J].

GOTO, T ;

MASUMOTO, H ;

HIRAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (01) :L88-L90

[7]

GOTO T, 1992, J MATER SCI, V27, P247, DOI 10.1007/BF02403670

[8] BORON-NITRIDE CHEMICAL VAPOR INFILTRATION OF FIBROUS MATERIALS FROM BCL3-NH3-H2 OR BF3-NH3 MIXTURES - A THERMODYNAMIC AND EXPERIMENTAL APPROACH [J].

HANNACHE, H ;

NASLAIN, R ;

BERNARD, C .

JOURNAL OF THE LESS-COMMON METALS, 1983, 95 (02) :221-246

[9] STRUCTURE AND PROPERTIES OF BORON-NITRIDE FILMS GROWN BY HIGH-TEMPERATURE REACTIVE PLASMA DEPOSITION [J].

HYDER, SB ;

YEP, TO .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1721-1724

[10]

JONES ME, 1975, TREATISE SOLID STATE, V5, P283