POTENTIALITY AND CHALLENGE OF METAL-ORGANIC MOLECULAR-BEAM EPITAXY

The method of metal-organic molecular beam epitaxy (MOMBE, or chemical beam epitaxy (CBE)) is basically the metal-organic vapour phase epitaxy (MOVPE) process carried out at extremely low pressures. Layers and device structures of group III-V elements have been grown by MOMBE that are of excellent quality and uniformity with regard to layer thickness and material composition. A striking feature is the superior selectivity of the growth process, opening new possibilities for the integration of electronic and optoelectronic devices. However, since MOMBE is a very recent epitaxial method it needs further development in the area of doping and in tailoring of starting materials particularly designed for MOMBE applications.