SEMI-INSULATING CURRENT BLOCKING PROPERTY SIMULATIONS FOR BURIED HETEROSTRUCTURE LASER-DIODES

被引：1

作者：

ASADA, S

SUGOU, S

KASAHARA, K

KATO, Y

KUMASHIRO, S

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,KAWASAKI,KANAGAWA 213,JAPAN

[2] NEC CORP,DIV ENGN,CAD,VLSI,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.99352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：703 / 705

页数：3

共 23 条

[1]

[Anonymous], 1978, HETEROSTRUCTURE LASE

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[3] LOW THRESHOLD 1.51-MU-M INGAASP BURINED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYER [J].

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URE, JW ;

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HESS, KL ;

ZEHR, SW .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1415-1417

[4] INGAASP LASER WITH SEMIINSULATING CURRENT CONFINING LAYERS [J].

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SHEN, TM ;

NAPHOLTZ, SG .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1572-1573

[5] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J].

FUNG, S ;

NICHOLAS, RJ ;

STRADLING, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23) :5145-5155

[6] COMPUTER-AIDED ANALYSIS OF GAAS N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER [J].

HORIO, K ;

IKOMA, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1242-1250

[7]

KATO Y, 1986, P INT S GAAS RELATED, P395

[8]

KUMASHIRO S, 1985, NASCODE 4

[9]

KUMASHIRO S, 1987, 34TH M JAP SOC APP 1, P911

[10]

Kurata M., 1982, NUMERICAL ANAL SEMIC

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