DISTRIBUTION OF THE DENSITY OF STATES OF BONDED HYDROGEN IN AMORPHOUS HYDROGENATED SILICON

被引：19

作者：

STREET, RA

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

SOLAR CELLS | 1991年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0379-6787(91)90052-Q

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hydrogen-induced metastability is analysed by a density of states distribution for bonded hydrogen, which describes the alternative hydrogen sites and the effects of disorder. The metastability is explained by the redistribution of hydrogen following illumination, annealing or a shift of the Fermi energy. Hydrogen and defect equilibria are related to the hydrogen diffusion and the chemical potential. An estimate of the hydrogen density of states distribution, based on the weak bond model, is shown to be consistent with the measured defect density. Irreversible metastable changes are related to structural reconstructions which change the shape of the distribution, while the reversible changes correspond to a redistribution of hydrogen within an approximately constant density of states.

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页码：207 / 218

页数：12

相关论文

共 19 条

[1] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].

BIEGELSEN, DK ;

STREET, RA ;

TSAI, CC ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846

[2] HYDROGENATED MICROVOIDS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS-SILICON SOLAR-CELLS [J].

CARLSON, DE .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04) :305-309

[3]

JACKSON WB, 1990, PHYS REV ETT, V65, P2575

[4] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM ;

HERRING, C ;

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1986, 56 (07) :769-772

[5] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].

KAKALIOS, J ;

STREET, RA ;

JACKSON, WB .

PHYSICAL REVIEW LETTERS, 1987, 59 (09) :1037-1040

[6] EVIDENCE FOR THE DEFECT POOL CONCEPT FOR SI DANGLING BOND STATES IN A-SI-H FROM EXPERIMENTS WITH THIN-FILM TRANSISTORS [J].

POWELL, MJ ;

FRENCH, ID ;

HUGHES, JR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :642-644

[7] BAND TAILS, ENTROPY, AND EQUILIBRIUM DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

SMITH, ZE ;

WAGNER, S .

PHYSICAL REVIEW LETTERS, 1987, 59 (06) :688-691

[8] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[9] HYDROGEN CHEMICAL-POTENTIAL AND STRUCTURE OF A-SI-H [J].

STREET, RA .

PHYSICAL REVIEW B, 1991, 43 (03) :2454-2457

[10] HYDROGEN DIFFUSION IN AMORPHOUS-SILICON [J].

STREET, RA ;

TSAI, CC ;

KAKALIOS, J ;

JACKSON, WB .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (03) :305-320