FLUORINE REDISTRIBUTION IN A CHEMICAL VAPOR-DEPOSITED TUNGSTEN POLYCRYSTALLINE SILICON GATE STRUCTURE DURING HEAT-TREATMENT

被引：6

作者：

ERIKSSON, T

CARLSSON, JO

KEINONEN, J

PETERSSON, CS

机构：

[1] UNIV UPPSALA,DEPT CHEM,THIN FILM & SURFACE CHEM GRP,S-75121 UPPSALA,SWEDEN

[2] UNIV HELSINKI,ACCELERATOR LAB,SF-00550 HELSINKI,FINLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3229 / 3232

页数：4

共 20 条

[1] LIFETIMES OF LOW-LYING STATES IN F-19 [J].

ANTTILA, A ;

BRANDENBURG, S ;

KEINONEN, J ;

BISTER, M .

NUCLEAR PHYSICS A, 1980, 334 (02) :205-216

[2] DETECTION OF FLUORINE THROUGH F-19(P,A-ALPHA-GAMMA)O-16 REACTION [J].

ANTTILA, A ;

KEINONEN, J .

INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1973, 24 (05) :293-294

[3] ALTERNATIVE MARKER EXPERIMENT IN FORMATION OF MO AND W SILICIDES [J].

BAGLIN, J ;

DHEURLE, F ;

PETERSSON, S .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :289-290

[4] FILM THICKNESS DEPENDENCE OF SILICON REDUCED LPCVD TUNGSTEN ON NATIVE OXIDE THICKNESS [J].

BUSTA, HH ;

TANG, CH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1195-1200

[5] PROCESSES IN INTERFACIAL ZONES DURING CHEMICAL VAPOR-DEPOSITION - ASPECTS OF KINETICS, MECHANISMS, ADHESION AND SUBSTRATE ATOM TRANSPORT [J].

CARLSSON, JO .

THIN SOLID FILMS, 1985, 130 (3-4) :261-282

[6]

CUOMO JJ, 1971, IBM TECH DISCL B, V14, P1379

[7]

CUOMO JJ, 1972, 3RD P INT C CHEM VAP, P270

[8]

DIEMEGARD D, 1980, NUCL INSTRUM METHODS, V168, P93

[9] OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEW [J].

FAIR, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1360-1368

[10] FLUORINE DISTRIBUTIONS IN A CHEMICAL VAPOR-DEPOSITED TUNGSTEN SILICIDE POLYCRYSTALLINE SILICON COMPOSITE GATE STRUCTURE [J].

FUKUMOTO, M ;

OHZONE, T .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :894-896

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