RIDGE-WAVE-GUIDE DBR LASER WITH NONABSORBING GRATING AND TRANSPARENT INTEGRATED WAVE-GUIDE

被引:6
作者
HOFSTETTER, D
ZAPPE, HP
EPLER, JE
机构
[1] Paul Scherrer Institut Zürich, CH-8048 Zürich, Switzerland
关键词
DISTRIBUTED BRAGG REFLECTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;
D O I
10.1049/el:19950643
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A ridge waveguide GaAs/AlGaAs DBR laser with a nonabsorbing grating section and a monolithically integrated transparent waveguide has been fabricated by the use of vacancy-enhanced quantum well disordering (VED). This technique allows the definition of absorbing and transparent regions, and requires only a single growth step. No VED-enhanced degradation of the laser quality was noted. The optical output power was 5 mW from both the cleaved facet and the grating reflector, threshold currents were 25 mA and the slope efficiencies were 0.2W/A.
引用
收藏
页码:980 / 982
页数:3
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