A ridge waveguide GaAs/AlGaAs DBR laser with a nonabsorbing grating section and a monolithically integrated transparent waveguide has been fabricated by the use of vacancy-enhanced quantum well disordering (VED). This technique allows the definition of absorbing and transparent regions, and requires only a single growth step. No VED-enhanced degradation of the laser quality was noted. The optical output power was 5 mW from both the cleaved facet and the grating reflector, threshold currents were 25 mA and the slope efficiencies were 0.2W/A.