TRAPATT OSCILLATIONS IN A P-I-N AVALANCHE DIODE

被引:9
作者
PARKER, D
机构
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D O I
10.1109/T-ED.1971.17189
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:281 / +
页数:1
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共 6 条
[1]  
CLORFEINE AS, 1969, RCA REV, V30, P397
[2]   DEVICE PHYSICS OF TRAPATT OSCILLATORS [J].
DELOACH, BC ;
SCHARFETTER, DL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :9-+
[3]   HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM AVALANCHE DIODES BELOW TRANSIT-TIME FREQUENCY [J].
JOHNSTON, RL ;
SCHARFET.DL ;
BARTELIN.DJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1611-+
[4]   NEGATIVE RESISTANCE AND FILAMENTARY CURRENTS IN AVALANCHING SILICON P+-I-N+ JUNCTIONS [J].
MULLER, MW ;
GUCKEL, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (08) :560-+
[5]   HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES [J].
PRAGER, HJ ;
CHANG, KKN ;
WEISBROD, S .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04) :586-+
[6]   LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].
SCHARFETTER, DL ;
GUMMEL, HK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :64-+