INVESTIGATION OF TRANSIENT TRANSPORT AND RECOMBINATION PHENOMENA IN SEMIINSULATING GAAS

被引：17

作者：

KAZUKAUSKAS, V

VAITKUS, J

机构：

[1] Semiconductor Physics Department, Vilnius University, Vilnius, 2054

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1994年 / 94卷 / 04期

关键词：

D O I：

10.1007/BF01317402

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoconductivity and Hall voltage kinetics were measured simultaneously in SI GaAs monocrystals, using the pulsed neodimium laser excitation. The scattering and recombination centres were found to have a different influence at different time intervals of the transients (from 10 ns to some seconds). It is shown that in GaAs the photoconductivity relaxation in some time intervals can be interpreted correctly only by taking into account the mobility changes. The obtained resuls are explained in terms of recharging of the scattering centres and variations of the capture cross-section of charge carriers on the local centres.

引用

页码：401 / 407

页数：7

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