COBALT LATTICE DIFFUSION IN BULK COBALT DISILICIDE

被引：22

作者：

BARGE, T ^{[1
]}

POIZE, S ^{[1
]}

BERNARDINI, J ^{[1
]}

GAS, P ^{[1
]}

机构：

[1] EUROPEAN SILICON STRUCT,ZI ROUSSET,F-13106 ROUSSET,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1991年 / 53卷

关键词：

D O I：

10.1016/0169-4332(91)90260-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Lattice diffusion of cobalt in cobalt disilicide has been studied using Co-60, conventional sectioning techniques and bulk samples of different compositions (stoichiometric, with small excess of silicon or cobalt). In the temperature range 760-1100-degrees-C, the cobalt lattice diffusion coefficients vary between 3 x 10(-15) and 9 x 10(-12) cm2/s with an activation energy of 2.83 eV. They are not influenced by silicon or cobalt excess. These values and the "relatively" high activation energy indicate a slow cobalt diffusion.

引用

页码：180 / 185

页数：6

共 26 条

[11] DIFFUSION MECHANISM IN BULK SILICIDES - RELATION WITH THIN-FILM BEHAVIOR (CASE OF NI2SI FORMATION) [J].

GAS, P .

APPLIED SURFACE SCIENCE, 1989, 38 (1-4) :178-184

[12] ISOTOPE-SEPARATION AND GROWTH MECHANISMS OF INTERMETALLIC PHASES - AN INVESTIGATION OF NICKEL SILICIDES BY SECONDARY ION MASS-SPECTROMETRY [J].

GAS, P ;

ZARING, C ;

SVENSSON, BG ;

OSTLING, M ;

PETERSSON, CS ;

DHEURLE, FM .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) :2390-2395

[13] DIFFUSION OF SB, GA, GE, AND (AS) IN TISI2 [J].

GAS, P ;

SCILLA, G ;

MICHEL, A ;

LEGOUES, FK ;

THOMAS, O ;

DHEURLE, FM .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) :5335-5345

[14]

GAS P, 1990, MATER RES SOC SYMP P, V187, P131, DOI 10.1557/PROC-187-131

[15]

GAS P, 1986, P E MRS ADV MATERIAL, P493

[16] DIFFUSION STUDIES ON THE B8 PHASE OF THE NI/SB SYSTEM [J].

HAHNEL, R ;

MIEKELEY, W ;

WEVER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01) :181-190

[17] KINETICS OF COSI2 FROM EVAPORATED SILICON [J].

LIEN, CD ;

NICOLET, MA ;

LAU, SS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04) :249-251

[18]

LIEN CD, 1984, MATER RES SOC S P, V25, P51

[19]

Nicolet MA, 1983, VLSI ELECTRONICS MIC, V6, P330

[20] REACTIVE DIFFUSION IN THIN-FILMS [J].

PHILIBERT, J .

APPLIED SURFACE SCIENCE, 1991, 53 :74-81

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