ETCH PIT DENSITY VARIATION AND ELECTRICAL-PROPERTIES OF GASB SINGLE-CRYSTALS GROWN BY THE BRIDGMAN METHOD

被引：2

作者：

ROY, UN

BASU, S

机构：

来源：

MATERIALS LETTERS | 1988年 / 6卷 / 07期

关键词：

D O I：

10.1016/0167-577X(88)90029-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：238 / 241

页数：4

共 16 条

[1] GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD [J].

BENZ, KW ;

MULLER, G .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (01) :35-42

[2] REDUCTION OF THRESHOLD CURRENT-DENSITY OF 2.2-MU-M GAINASSB/ALGAASSB INJECTION-LASERS [J].

CANEAU, C ;

SRIVASTAVA, AK ;

DENTAI, AG ;

ZYSKIND, JL ;

BURRUS, CA ;

POLLACK, MA .

ELECTRONICS LETTERS, 1986, 22 (19) :992-993

[3] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :165-167

[4]

Dolginov L. M., 1978, Soviet Journal of Quantum Electronics, V8, DOI 10.1070/QE1978v008n03ABEH010046

[5] DIRECT SYNTHESIS AND CRYSTALLIZATION OF GASB [J].

HARSY, M ;

GOROG, T ;

LENDVAY, E ;

KOLTAI, F .

JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :234-238

[6] THE GROWTH AND TEXTURE STUDY OF GASB INGOTS [J].

HARSY, M ;

KOLTAI, F ;

GYURO, I ;

GOROG, T ;

LENDVAY, E .

ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1982, 53 (1-2) :133-141

[7]

HARSY M, 1985, ACTA PHYS HUNG, V57, P245

[8] 2.0 MU-M CW OPERATION OF GALNASSB-GASB DH LASERS AT 80-K [J].

KANO, H ;

SUGIYAMA, K .

ELECTRONICS LETTERS, 1980, 16 (04) :146-147

[9] LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE [J].

KONDO, S ;

MIYAZAWA, S .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) :39-44

[10] FACETS IN GASB CRYSTALS PULLED UNDER CONCAVE INTERFACE CONDITIONS [J].

KUMAGAWA, M ;

ASABA, Y ;

YAMADA, S .

JOURNAL OF CRYSTAL GROWTH, 1977, 41 (02) :245-253

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