共 16 条
[2]
SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
[J].
PHYSICAL REVIEW B,
1978, 18 (04)
:1780-1789
[3]
BLOW KJ, 1980, J PHYS C, V13, P539
[4]
OPTIMIZATION STUDIES OF LOCALIZED DEFECT CALCULATIONS IN SEMICONDUCTORS
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1978, 11 (24)
:4963-4973
[6]
BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
[J].
PHYSICAL REVIEW,
1966, 141 (02)
:789-+
[8]
LOCALIZED ELECTRON STATES ASSOCIATED WITH GA-VACANCY AND AS-VACANCY IN GAAS
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1975, 8 (23)
:L550-L553
[9]
WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1977, 16 (08)
:3694-3706
[10]
2-ELECTRON IMPURITY STATES IN GAP - O
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1975, 8 (15)
:2455-2462