EFFECT OF REDUNDANT MICROSTRUCTURE ON ELECTROMIGRATION-INDUCED FAILURE

被引：20

作者：

LEARN, AJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 08期

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D O I：

10.1063/1.1653923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：292 / &

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[1] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS
AGARWALA, BN
ATTARDO, MJ
INGRAHAM, AP
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3954 - &
[2] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING
AMES, I
DHEURLE, FM
HORSTMANN, RE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) : 461 - +
[3] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS
ATTARDO, MJ
ROSENBERG, R
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +
[4] ELECTROMIGRATION DAMAGE OF GRAIN-BOUNDARY TRIPLE POINTS IN A1 THIN FILMS
BERENBAUM, L
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 880 - +
[5] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES
BLACK, JR
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1587 - &
[6] BLACK JR, 1969, IEEE T ELECTRON DEVI, VED16, P338
[7] ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORS
BLAIR, JC
GHATE, PB
HAYWOOD, CT
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 281 - &
[8] HEURLE FM, 1971, MET T, V2, P683
[9] LEARN AJ, 1971 P REL PHYS S
[10] RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS
ROSENBERG, R
BERENBAUM, L
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (05) : 201 - +