INFLUENCE OF THE DEPOSITION AND ANNEAL TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF INDIUM TIN OXIDE

被引：30

作者：

WEIJTENS, CHL ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 11期

关键词：

D O I：

10.1149/1.2085429

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.

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页码：3432 / 3434

页数：3

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