MECHANISTICS OF EARLY-STAGE GROWTH OF ALN ON ALUMINA .2. TMAL AND NH3

被引：18

作者：

BERTOLET, DC ^{[1
]}

LIU, H ^{[1
]}

ROGERS, JW ^{[1
]}

机构：

[1] UNIV WASHINGTON,DEPT CHEM ENGN,BF-10,SEATTLE,WA 98195

来源：

CHEMISTRY OF MATERIALS | 1993年 / 5卷 / 12期

关键词：

D O I：

10.1021/cm00036a020

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reactions of trimethylaluminum (TMAl) and ammonia (NH3) on gamma-alumina were studied by Fourier transform infrared spectroscopy, thermal desorption spectroscopy, and X-ray photoelectron spectroscopy (XPS) to explore their feasibility as precursors for the low-temperature growth of AlN. Upon exposure of TMAl and NH3, covalently bonded Al-N networks are formed at room temperature. This reaction efficiency is enhanced by a factor of 4 when the NH3 is dosed with the substrate at 600 K. An atomic layer growth process involving cyclic processing at 600 K yielded site-specific reaction of the TMAl, followed by facile reaction of the ammonia to create new sites for the TMAl reaction. XPS results confirmed the presence of AlN.

引用

页码：1814 / 1818

页数：5

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