INFRARED RESONANCE EXCITATION OF GAMMA-LAYERS - A SILICON-BASED INFRARED QUANTUM-WELL DETECTOR

被引：23

作者：

TEMPEL, G ^{[1
]}

SCHWARZ, N ^{[1
]}

MULLER, F ^{[1
]}

KOCH, F ^{[1
]}

ZEINDL, HP ^{[1
]}

EISELE, I ^{[1
]}

机构：

[1] UNIV BUNDESWEHR,W-8014 MUNICH,GERMANY

来源：

THIN SOLID FILMS | 1990年 / 184卷

关键词：

D O I：

10.1016/0040-6090(90)90411-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resonant excitation of sub-bands in the self-consistent potential well formed by a δ-layer of antimony in silicon has been measured. The density-tuneable resonance of a single δ-layer has an absorption strength of the order of 50%. The expected splitting of the quantum states into two different sub-band ladders, caused by the multi-valley property of silicon, is obtained. Good agreement with self-consistent calculations can be obtained if an additional background of deep levels near the δ-layer is assumed. An IR detector concept is discussed. © 1990.

引用

页码：171 / 176

页数：6

共 23 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].