LOW-TEMPERATURE EPITAXIAL-GROWTH OF ZN CHALCOGENIDES ON GAAS(001) BY POSTHEATED MOLECULAR-BEAMS

被引：2

作者：

YONETA, M

HAMASAKI, T

OHISHI, M

SAITO, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial layers of ZnSe and ZnS were grown by molecular-beam epitaxy at temperature as low as 150-degrees-C by using postheated molecular beams generated from elemental materials. To obtain postheated molecular beams as well as to control flux intensity for materials with very high, vapor pressure, new types of effusion cells are developed. Experiments under the different temperature and molecular-beam conditions clarified that the enhancement of the surface migration of Zn atoms is essential to the lowering of the growth temperature.

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页码：878 / 880

页数：3

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