SPUTTERED OXIDE INDIUM-PHOSPHIDE JUNCTIONS AND INDIUM-PHOSPHIDE SURFACES

被引:75
作者
TSAI, MJ
FAHRENBRUCH, AL
BUBE, RH
机构
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D O I
10.1063/1.327930
中图分类号
O59 [应用物理学];
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页码:2696 / 2705
页数:10
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共 26 条
[1]  
ARANOVICH J, UNPUBLISHED
[2]  
BACHMANN K, UNPUBLISHED
[3]   CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS [J].
BACHMANN, KJ ;
BUEHLER, E ;
MILLER, BI ;
MCFEE, JH ;
THIEL, FA .
JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) :137-150
[4]   SOLAR-CELL CHARACTERISTICS AND INTERFACIAL CHEMISTRY OF INDIUM-TIN-OXIDE-INDIUM PHOSPHIDE AND INDIUM-TIN-OXIDE-GALLIUM ARSENIDE JUNCTIONS [J].
BACHMANN, KJ ;
SCHREIBER, H ;
SINCLAIR, WR ;
SCHMIDT, PH ;
THIEL, FA ;
SPENCER, EG ;
PASTEUR, G ;
FELDMANN, WL ;
SREEHARSHA, K .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3441-3446
[5]   COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J].
BAYLISS, CR ;
KIRK, DL .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) :233-&
[6]   DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].
BEAN, JC ;
BECKER, GE ;
PETROFF, PM ;
SEIDEL, TE .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913
[7]   THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE [J].
BERZ, F ;
KUIKEN, HK .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :437-445
[8]   PREPARATION OF CDS-INP SOLAR-CELLS BY CHEMICAL VAPOR-DEPOSITION OF CDS [J].
BETTINI, M ;
BACHMANN, KJ ;
BUEHLER, E ;
SHAY, JL ;
WAGNER, S .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1603-1606
[9]   CDS-INP AND CDS-GAAS HETEROJUNCTIONS BY CHEMICAL-VAPOR DEPOSITION OF CDS [J].
BETTINI, M ;
BACHMANN, KJ ;
SHAY, JL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :865-870
[10]   PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].
CHIANG, SY ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991