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SPUTTERED OXIDE INDIUM-PHOSPHIDE JUNCTIONS AND INDIUM-PHOSPHIDE SURFACES
被引:75
作者
:
TSAI, MJ
论文数:
0
引用数:
0
h-index:
0
TSAI, MJ
FAHRENBRUCH, AL
论文数:
0
引用数:
0
h-index:
0
FAHRENBRUCH, AL
BUBE, RH
论文数:
0
引用数:
0
h-index:
0
BUBE, RH
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1980年
/ 51卷
/ 05期
关键词
:
D O I
:
10.1063/1.327930
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2696 / 2705
页数:10
相关论文
共 26 条
[1]
ARANOVICH J, UNPUBLISHED
[2]
BACHMANN K, UNPUBLISHED
[3]
CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS
[J].
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BACHMANN, KJ
;
BUEHLER, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BUEHLER, E
;
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, BI
;
MCFEE, JH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MCFEE, JH
;
THIEL, FA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
THIEL, FA
.
JOURNAL OF CRYSTAL GROWTH,
1977,
39
(01)
:137
-150
[4]
SOLAR-CELL CHARACTERISTICS AND INTERFACIAL CHEMISTRY OF INDIUM-TIN-OXIDE-INDIUM PHOSPHIDE AND INDIUM-TIN-OXIDE-GALLIUM ARSENIDE JUNCTIONS
[J].
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BACHMANN, KJ
;
SCHREIBER, H
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SCHREIBER, H
;
SINCLAIR, WR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SINCLAIR, WR
;
SCHMIDT, PH
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SCHMIDT, PH
;
THIEL, FA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
THIEL, FA
;
SPENCER, EG
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SPENCER, EG
;
PASTEUR, G
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
PASTEUR, G
;
FELDMANN, WL
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
FELDMANN, WL
;
SREEHARSHA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SREEHARSHA, K
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
:3441
-3446
[5]
COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM
[J].
BAYLISS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
BAYLISS, CR
;
KIRK, DL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
KIRK, DL
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(02)
:233
-&
[6]
DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
[J].
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BEAN, JC
;
BECKER, GE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BECKER, GE
;
PETROFF, PM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PETROFF, PM
;
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SEIDEL, TE
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(03)
:907
-913
[7]
THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE
[J].
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
BERZ, F
;
KUIKEN, HK
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
KUIKEN, HK
.
SOLID-STATE ELECTRONICS,
1976,
19
(06)
:437
-445
[8]
PREPARATION OF CDS-INP SOLAR-CELLS BY CHEMICAL VAPOR-DEPOSITION OF CDS
[J].
BETTINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BETTINI, M
;
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BACHMANN, KJ
;
BUEHLER, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BUEHLER, E
;
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SHAY, JL
;
WAGNER, S
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
WAGNER, S
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(04)
:1603
-1606
[9]
CDS-INP AND CDS-GAAS HETEROJUNCTIONS BY CHEMICAL-VAPOR DEPOSITION OF CDS
[J].
BETTINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BETTINI, M
;
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BACHMANN, KJ
;
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAY, JL
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(02)
:865
-870
[10]
PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
[J].
CHIANG, SY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHIANG, SY
;
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(07)
:2986
-2991
←
1
2
3
→
共 26 条
[1]
ARANOVICH J, UNPUBLISHED
[2]
BACHMANN K, UNPUBLISHED
[3]
CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS
[J].
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BACHMANN, KJ
;
BUEHLER, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BUEHLER, E
;
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MILLER, BI
;
MCFEE, JH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MCFEE, JH
;
THIEL, FA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
THIEL, FA
.
JOURNAL OF CRYSTAL GROWTH,
1977,
39
(01)
:137
-150
[4]
SOLAR-CELL CHARACTERISTICS AND INTERFACIAL CHEMISTRY OF INDIUM-TIN-OXIDE-INDIUM PHOSPHIDE AND INDIUM-TIN-OXIDE-GALLIUM ARSENIDE JUNCTIONS
[J].
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BACHMANN, KJ
;
SCHREIBER, H
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SCHREIBER, H
;
SINCLAIR, WR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SINCLAIR, WR
;
SCHMIDT, PH
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SCHMIDT, PH
;
THIEL, FA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
THIEL, FA
;
SPENCER, EG
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SPENCER, EG
;
PASTEUR, G
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
PASTEUR, G
;
FELDMANN, WL
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
FELDMANN, WL
;
SREEHARSHA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SREEHARSHA, K
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
:3441
-3446
[5]
COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM
[J].
BAYLISS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
BAYLISS, CR
;
KIRK, DL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,INTERFACE PHYS GRP,NOTTINGHAM NG7 2RD,ENGLAND
KIRK, DL
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1976,
9
(02)
:233
-&
[6]
DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
[J].
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BEAN, JC
;
BECKER, GE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BECKER, GE
;
PETROFF, PM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PETROFF, PM
;
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SEIDEL, TE
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(03)
:907
-913
[7]
THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE
[J].
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
BERZ, F
;
KUIKEN, HK
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
KUIKEN, HK
.
SOLID-STATE ELECTRONICS,
1976,
19
(06)
:437
-445
[8]
PREPARATION OF CDS-INP SOLAR-CELLS BY CHEMICAL VAPOR-DEPOSITION OF CDS
[J].
BETTINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BETTINI, M
;
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BACHMANN, KJ
;
BUEHLER, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BUEHLER, E
;
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SHAY, JL
;
WAGNER, S
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
WAGNER, S
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(04)
:1603
-1606
[9]
CDS-INP AND CDS-GAAS HETEROJUNCTIONS BY CHEMICAL-VAPOR DEPOSITION OF CDS
[J].
BETTINI, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BETTINI, M
;
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BACHMANN, KJ
;
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAY, JL
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(02)
:865
-870
[10]
PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
[J].
CHIANG, SY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
CHIANG, SY
;
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD ELECTR LABS,STANFORD,CA 94305
PEARSON, GL
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(07)
:2986
-2991
←
1
2
3
→