THE CORRELATIONS BETWEEN PHYSICAL AND ELECTRICAL-PROPERTIES OF PECVD SIN WITH THEIR COMPOSITION RATIOS

被引：51

作者：

SAMUELSON, GM ^{[1
]}

MAR, KM ^{[1
]}

机构：

[1] MOTOROLA SEMICOND GRP,PHOENIX,AZ 85008

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

10.1149/1.2124291

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1773 / 1778

页数：6

相关论文

共 13 条

[1] Daniel V., 1967, DIELECTRIC RELAXATIO
[2] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
LANFORD, WA
RAND, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477
[3] MAR KM, 1980, SOLID STATE TECHNOL, V23, P137
[4] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE
PEERCY, PS
STEIN, HJ
DOYLE, BL
PICRAUX, ST
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) : 11 - 24
[5] PLASMA-PROMOTED DEPOSITION OF THIN INORGANIC FILMS
RAND, MJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 420 - 427
[6] OPTICAL-ABSORPTION AS A CONTROL TEST FOR PLASMA SILICON-NITRIDE DEPOSITION
RAND, MJ
WONSIDLER, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) : 99 - 101
[7] RAND MJ, 1977, OCT EL SOC M ATL
[8] ROSLER RS, 1976, SOLID STATE TECHNOL, V19, P45
[9] ELECTRICAL-PROPERTIES OF SI-N FILMS DEPOSITED ON SILICON FROM REACTIVE PLASMA
SINHA, AK
SMITH, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) : 2756 - 2760
[10] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION
SINHA, AK
LEVINSTEIN, HJ
SMITH, TE
QUINTANA, G
HASZKO, SE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 601 - 608