CHEMICAL VAPOR DEPOSITION OF ARSENOSILICATE GLASS - ONE-LIQUID-SOURCE SYSTEM

[1] STRUCTUAL CHANGES OF ARSENIC SILICATE GLASSES WITH HEAT TREATMENTS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) : 691 - +

[2] BHOLA SR, 1963, RCA REV, V24, P511

[3] GLASS SOURCE B DIFFUSION IN SI AND SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +

[4] CUCCIA A, 1969, SEMICONDUCTOR SILICO

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[6] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .2. FILM PROPERTIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 568 - &

[7] DIFFUSION INTO SILICON FROM AN ARSENIC-DOPED OXIDE [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 623 - &

[8] VAPOR PRESSURE OF PURE SUBSTANCES - ORGANIC COMPOUNDS [J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1947, 39 (04): : 517 - 540

[9] TENNEY AS, TO BE PUBLISHED

[10] Teshima H., 1969, Bulletin of the Electrotechnical Laboratory, V33, P631

[1] STRUCTUAL CHANGES OF ARSENIC SILICATE GLASSES WITH HEAT TREATMENTS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) : 691 - +

[2] BHOLA SR, 1963, RCA REV, V24, P511

[3] GLASS SOURCE B DIFFUSION IN SI AND SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +

[4] CUCCIA A, 1969, SEMICONDUCTOR SILICO

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[6] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .2. FILM PROPERTIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 568 - &

[7] DIFFUSION INTO SILICON FROM AN ARSENIC-DOPED OXIDE [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 623 - &

[8] VAPOR PRESSURE OF PURE SUBSTANCES - ORGANIC COMPOUNDS [J]. INDUSTRIAL AND ENGINEERING CHEMISTRY, 1947, 39 (04): : 517 - 540

[9] TENNEY AS, TO BE PUBLISHED

[10] Teshima H., 1969, Bulletin of the Electrotechnical Laboratory, V33, P631