THE DIFFUSION BARRIER EFFECT OF A VANADIUM LAYER IN THE FORMATION OF NICKEL SILICIDES

被引：9

作者：

KOTAKE, H

OANA, Y

WATANABE, I

机构：

来源：

THIN SOLID FILMS | 1981年 / 75卷 / 03期

关键词：

D O I：

10.1016/0040-6090(81)90403-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：247 / 252

页数：6

共 9 条

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[2] FORMATION OF NI AND PT SILICIDE 1ST PHASE - DOMINANT ROLE OF REACTION-KINETICS [J].

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CATELLANI, F ;

OTTAVIANI, G ;

PRUDENZIATI, M .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :187-190

[3] IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION [J].

CHU, WK ;

KRAUTLE, H ;

MAYER, JW ;

MULLER, H ;

NICOLET, MA ;

TU, KN .

APPLIED PHYSICS LETTERS, 1974, 25 (08) :454-457

[4] ALUMINUM-NICKEL SILICIDE CONTACTS ON SILICON [J].

HOKELEK, E ;

ROBINSON, GY .

THIN SOLID FILMS, 1978, 53 (02) :135-140

[5]

Kirkendall EO, 1942, T AM I MIN MET ENG, V147, P104

[6] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J].

KRAUTLE, H ;

NICOLET, MA ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3304-3308

[7] INFLUENCE OF NATURE OF SI SUBSTRATE ON NICKEL SILICIDE FORMED FROM THIN NI FILMS [J].

OLOWOLAFE, JO ;

NICOLET, MA ;

MAYER, JW .

THIN SOLID FILMS, 1976, 38 (02) :143-150

[8] FORMATION OF VANADIUM SILICIDES BY INTERACTIONS OF V WITH BARE AND OXIDIZED SI WAFERS [J].

TU, KN ;

ZIEGLER, JF ;

KIRCHER, CJ .

APPLIED PHYSICS LETTERS, 1973, 23 (09) :493-495

[9] STRUCTURE AND GROWTH KINETICS OF NI2SI ON SILICON [J].

TU, KN ;

CHU, WK ;

MAYER, JW .

THIN SOLID FILMS, 1975, 25 (02) :403-413

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