PD/GE OHMIC CONTACTS TO N-TYPE GAAS FORMED BY RAPID THERMAL ANNEALING

被引：25

作者：

LAI, JT ^{[1
]}

LEE, JYM ^{[1
]}

机构：

[1] TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pd/Ge ohmic contact to n-type GaAs is obtained by using the rapid thermal annealing (RTA) method. The best specific contact resistivity of ohmic contacts annealed at 400-500 degrees C is on the order of 10(-6) Omega cm(2). Secondary ion mass spectrometry (SIMS) measurement shows that these ohmic contacts are very shallow. Gallium dissociation from GaAs is observed. It is found that there is a correlation between a gallium SIMS signal bump and good ohmic contact behavior. A model is proposed for this phenomenon. This RTA ohmic contact method has been successfully applied to the fabrication of charge injection transistor/negative resistance field-effect transistor devices.

引用

收藏

页码：229 / 231

页数：3

相关论文

共 10 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[2]

LAI JT, IN PRESS APPL PHYS L

[3] CHARGE INJECTION TRANSISTOR BASED ON REAL-SPACE HOT-ELECTRON TRANSFER [J].

LURYI, S ;

KASTALSKY, A ;

GOSSARD, AC ;

HENDEL, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :832-839

[4] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE [J].

MARSHALL, ED ;

ZHANG, B ;

WANG, LC ;

JIAO, PF ;

CHEN, WX ;

SAWADA, T ;

LAU, SS ;

KAVANAGH, KL ;

KUECH, TF .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :942-947

[5] NON-ALLOYED OHMIC CONTACT TO NORMAL-GAAS BY SOLID-PHASE EPITAXY [J].

MARSHALL, ED ;

CHEN, WX ;

WU, CS ;

LAU, SS ;

KUECH, TF .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :298-300

[6] REAL-SPACE TRANSFER IN 3-TERMINAL INGAAS/INALAS/INGAAS HETEROSTRUCTURE DEVICES [J].

MENSZ, PM ;

LURYI, S ;

CHO, AY ;

SIVCO, DL ;

REN, F .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2563-2565

[7] GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION [J].

PALMSTROM, CJ ;

SCHWARZ, SA ;

YABLONOVITCH, E ;

HARBISON, JP ;

SCHWARTZ, CL ;

FLOREZ, LT ;

GMITTER, TJ ;

MARSHALL, ED ;

LAU, SS .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :334-339

[8] SOLID-PHASE REGROWTH OF COMPOUND SEMICONDUCTORS BY REACTION-DRIVEN DECOMPOSITION OF INTERMEDIATE PHASES [J].

SANDS, T ;

MARSHALL, ED ;

WANG, LC .

JOURNAL OF MATERIALS RESEARCH, 1988, 3 (05) :914-921

[9] AN INVESTIGATION OF A NONSPIKING OHMIC CONTACT TO N-GAAS USING THE SI/PD SYSTEM [J].

WANG, LC ;

ZHANG, B ;

FANG, F ;

MARSHALL, ED ;

LAU, SS ;

SANDS, T .

JOURNAL OF MATERIALS RESEARCH, 1988, 3 (05) :922-930

[10] THE TEMPERATURE-DEPENDENCE OF CONTACT RESISTIVITY OF THE GE PD AND THE SI PD NONALLOYED CONTACT SCHEME ON N-GAAS [J].

YU, LS ;

WANG, LC ;

MARSHALL, ED ;

LAU, SS ;

KUECH, TF .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1621-1625