THE TEMPERATURE-DEPENDENCE OF CONTACT RESISTIVITY OF THE GE PD AND THE SI PD NONALLOYED CONTACT SCHEME ON N-GAAS

被引：69

作者：

YU, LS ^{[1
]}

WANG, LC ^{[1
]}

MARSHALL, ED ^{[1
]}

LAU, SS ^{[1
]}

KUECH, TF ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.342954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1621 / 1625

页数：5

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